PART |
Description |
Maker |
KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
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K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静态RAM.0V操作)。在经营商业和工业温度范围 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静RAM.0V操作)。在经营商业和工业温度范围 CAP,ELECTRO,1000UF,25V DIODE,RECT,1A 400V SMD MELF PCB Relay; Contacts:SPDT; Coil Voltage AC Max:120V; Contact Carry Current:30A; Coil Resistance:3000ohm; Mounting Type:PCB; Relay Terminals:Quick Connect; Relay Mounting:PC Board; Contact Rating:30A; Switch Function:SPDT Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x20 mm; Packaging: Bulk
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IDT7133LA IDT7133SA IDT7143LA IDT7143SA IDT7133LA5 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K x 16 Dual-Port RAM HIGH SPEED 2K X 16 DUAL-PORT SRAM HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CPGA68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQCC68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQFP100 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CQFP68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CQFP68 30V N-Channel Logic Level PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel 2K X 16 DUAL-PORT SRAM, 35 ns, PQFP100 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, PQCC68 150V N-Channel UltraFET Trench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 25 ns, CQFP68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68 INDUCT 22.8UH 4.9A 260KHZ KLIPMT 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高K × 16的CMOS双端口静态存储器 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, CQFP68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQCC68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CQFP68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高2K × 16的CMOS双端口静态存储器 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CPGA68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQCC68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQFP100 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68 400V N-Channel MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, PQCC68 100V N-Channel Trench MOSFET 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68 HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 55 ns, PQCC68
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Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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BS616LV4018 BS616LV4018EI BS616LV4018AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16 Asynchronous 4M(256Kx16) bits Static RAM From old datasheet system
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Electronic Theatre Controls, Inc. Brilliance Semiconductor BSI ETC[ETC] List of Unclassifed Manufacturers
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P4C116-12JM P4C116-10JM P4C116-10JMB P4C116-20L28M |
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDIP24 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, QCC28 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 超高K × 8静态CMOS五羊 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, QCC28 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, CDIP24 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, PDSO24 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, CDIP24 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, PDIP24 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, PDFP24 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDSO24 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, QCC32
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Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
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K6T4016V3BK6T4016U3BFAMILY |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Data Sheet
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Samsung Electronic
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W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM 128K x 16 HIGH-SPEED CMOS STATIC RAM From old datasheet system 128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM)的 128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
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WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
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IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM From old datasheet system ASYNCHRONOUS STATIC RAM 128K x 8 HIGH-SPEED CMOS STATIC RAM
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Advanced Interconnections, Corp. SIEMENS AG Integrated Silicon Solution, Inc. ICSI[Integrated Circuit Solution Inc] Integrated Circuit Solu...
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CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM 131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
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SONY Vishay Intertechnology, Inc.
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IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM RES CH 68.1 EW 1% ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
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Electronic Theatre Controls, Inc. ICSI Integrated Circuit Solution Inc
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